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| Ordering number : EN8749 FW261 N-Channel Silicon MOSFET FW261 Features * * General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (PW10s) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Duty cycle1% Duty cycle1% Duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm) 1unit, PW10s Mounted on a ceramic board (2000mm2!0.8mm), PW10s Conditions Ratings 30 20 5 6 10 20 1.8 2.2 150 --55 to +150 Unit V V A A A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=3A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 10 1.2 3.9 5.5 37 64 460 95 75 15 20 30 20 48 83 2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns Marking : W261 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1405PA MS IM TB-00001816 No.8749-1/4 FW261 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0V Ratings min typ 8.6 2.0 1.6 0.9 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7005-003 8 5 0.3 Electrical Connection 8 7 6 5 1 4 0.43 0.2 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 4.4 0.595 1.27 Switching Time Test Circuit VIN 10V 0V VIN ID=5A RL=3 VDD=15V 0.1 1.5 1.8 MAX D PW=10s D.C.1% VOUT G FW261 P.G 50 S 6.0 No.8749-2/4 FW261 5 ID -- VDS 10.0V 8.0V 6.0V 10 9 8 ID -- VGS VDS=10V 4.0V 4 3.5 V 3.0 V Drain Current, ID -- A Drain Current, ID -- A 2.5V 7 6 5 4 3 2 1 3 2 1 VGS=2.0V 0 0 0.2 0.4 0.6 0.8 1.0 IT04957 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V 200 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 100 --25 Ta=7 5 C C 25C IT04958 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 80 150 ID=3A 5A 100 3A, I D= 60 =4V VGS 40 A, VG I D=5 10V S= 50 20 0 0 1 2 3 4 5 6 7 8 9 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 23 57 0.01 23 57 0.1 23 57 1.0 23 yfs -- ID IT04959 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 10 IT04961 1000 7 5 57 0 0.2 Ambient Temperature, Ta -- C IT04960 IS -- VSD VGS=0V VDS=10V 25 C C -25 = - 5C Ta 7 Source Current, IS -- A 0.4 Ta= 75C 25C --25 C 0.6 0.8 1.0 1.2 1.4 IT04962 Drain Current, ID -- A 100 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 7 VDD=15V VGS=10V Ciss, Coss, Crss -- pF 5 3 2 td (off) 3 2 tf 100 7 5 Coss Crss tr 10 0.1 2 3 5 7 1.0 2 td(on) 3 5 10 IT04963 7 3 0 5 10 15 20 25 30 IT10287 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No.8749-3/4 FW261 10 VGS -- Qg VDS=10V ID=5A 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=20A ID=5A 10 1m s Gate-to-Source Voltage, VGS -- V 8 <10s 10 0 s Drain Current, ID -- A 10 6 0m ms s DC op 10 s 4 era tio Operation in this area is limited by RDS(on). n 2 0 0 1 2 3 4 5 6 7 8 9 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC 2.5 IT04965 PD -- Ta Mounted on a ceramic board(2000mm2!0.8mm), PW10s Drain-to-Source Voltage, VDS -- V IT10288 Allowable Power Dissipation, PD -- W 2.2 2.0 1.8 1.5 To t al di ss ip ati 1.0 1u on nit 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10289 Note on usage : Since the FW261 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice. PS No.8749-4/4 |
Price & Availability of FW26107
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